Current instability within GaN/AlGaN high electron mobility transistor (HEMT)
Batoul Abouddouhaj,
University Mohammed VI Polytechnic (Institute of Applied Physics)
IAP Physics Seminar Series will occur on Tuesday 15 October, at 11:15 at the UM6P campus (Ryad 8, 1st floor).
Abstract:
High electron mobility transistors (HEMTs) are known for their fast response time, room temperature operation, and robustness to important electric fields due to their large current saturation. These contributions make HEMTs prominent candidates for high-frequency applications such as terahertz detection and emission. Dyakonov and Shur’s pioneering work demonstrated these latter. First, they demonstrated the ability of field effect transistors to generate terahertz radiation due to plasma waves excited in the channel. Later, in 1996, they demonstrated that FETs enable the detection of terahertz radiation through a resonance response or a non-resonance response to electromagnetic radiations at the plasma oscillation frequencies of the two-dimensional electrons in the transistor depending on the length of the transistor’s channel. The study presents experimental demonstration of drain current instability within GaN/AlGaN high electron mobility transistor (HEMT) and its ability to detect terahertz radiation operating at 0.3 THz. Altogether, we showcase an enthralling behavior in terms of the current instability, the latter doesn’t sustain the same position for the same measurement parameters, it can be depicted as “a chaotic shift” and that is an intriguing behavior that we’re investigating further.
Biography:
Batoul Abouddouhaj completed a master’s in computational physics at Mohammed V University in 2022 in Rabat. Currently pursuing a PhD focusing on high electron mobility transistors for terahertz detection and emission at the Institute of Applied Physics, Mohammed VI Polytechnic University in Benguerir, under the supervision of Professor Abdelouahed El Fatimy.
Localization: Ryad 8, 1st Floor.